Oxford Instruments Plasma Lab 100 PECVD
Oxford Instruments Plasma Lab 100 PECVD
TOOL ID: CVD-01
This is a load locked PECVD system capable of depositing SiO2, Si3N4 and a-Si. Process temperatures range from room temperature through 400C. In addition to standard RF plasma, there is a low frequency source for stress tuning films. The system handles 4”/100mm wafers.
![](https://www.nano.upenn.edu/wp-content/uploads/2022/03/CVD-01-scaled.jpeg)
Oxford Instruments Plasma Lab 100 PECVD