Equipment/Instrumentation

Oxford Instruments Plasma Lab 100 PECVD

Oxford Instruments Plasma Lab 100 PECVD

This is a load locked PECVD system capable of depositing SiO2, Si3N4 and a-Si. Process temperatures range from room temperature through 400C. In addition to standard RF plasma, there is a low frequency source for stress tuning films. The system handles 4”/100mm wafers.

Oxford Instruments Plasma Lab 100 PECVD