Penn: Sing Center for Nanotechnology

Quattrone Nanofabrication Facility  

The Quattrone Nanofabrication Facility, made possible by a gift from the Frank and Denise Quattrone Foundation, features 10,000 net square feet of space divided into class 100 (3,100 square feet), 1000 (5,050 square feet), and 10,000 (1,850 square feet) areas. The facility emphasizes high-resolution fabrication techniques, flexibility to allow exotic materials and non-traditional process flows, and immediate access to metrology and characterization that can be fed back to the development of fabrication processes. A current generation of lithography, deposition, etching and packaging tools will be augmented by new tools to enhance capabilities in these core processes. Furthermore, new capability in non-traditional processes such as soft lithography, direct-write patterning, and 3D self-assembly techniques will be added. The complete suite of tools will enable research across a range of emerging and established areas, including nanoelectronics, nanomaterials development and integration, soft matter, microfluidics, and micro/nanoelectromechanical systems (MEMS/NEMS) . The tools in the facility will be configured to handle substrates from small pieces up to 6” wafers. The details of existing and planned equipment in the facility are:

Lithography:

A recently acquired Elionix 7500 50kV e-beam lithography system, enabling fabrication of high resolution structures that reach the size of individual nanoparticles and even individual molecules. It is capable of writing 10 nm-wide lines. Read More

  • A recently acquired Elionix 7500 50kV e-beam lithography system, enabling fabrication of high resolution structures that reach the size of individual nanoparticles and even individual molecules. It is capable of writing 10 nm-wide lines. A 2 nm beam diameter is generated by accelerating the electrons emitted by a ZrO/W thermal field (Schottky) emission electron gun through a 50 kV voltage. An x-y laser interferometer and a laser height sensor are used to achieve a 50 nm stitching accuracy and 60 nm overlay accuracy. The tool is fitted with an electrostatic beam blanker (25 ns rise/fall time) and three motorized apertures (30 um, 40 um, and 60 um). The beam current can be adjusted from 1 pA to 50 nA and the writing field ranges from 75 um square to 2.4 mm square. Wafers up to 6 inch-diameter can be exposed.
  • A newly commissioned Nanonex NX2600 Nanoimprint Lithography System with photolithography and backside alignment allows a wide range of materials and devices to be patterned on the nanoscale in parallel over large areas. The NX-2600 combines a nanoimprint tool and a mask aligner. It offers 10 nm imprint resolution and 250 nm photolithography resolution with 1 µm overlay accuracy. It can handle small pieces as well as up to 6 inch-diameter wafers.
  • A MA4 mask aligner that can accommodate up to 4-inch wafers. The following exposure modes can be employed: proximity, soft contact, and hard contact. The tool is equipped with an infrared backside alignment system.
  • A G4 Nikon stepper is a 5x reduction system operating on the g-line and is capable of consistently achieving 0.75 um features.
  • The YES-1224P oven is used for surface treatment of samples, e.g. adhesion promoting with HMDS. The samples can be cleaned in situ with and oxygen plasma immediately before deposition. The tool can also be used for image reversal using ammonia.
  • A new stepper, mask aligner, laser writer, and mask processor are planned for the new facility.
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Deposition:

The Explorer-14 sputterer is equipped with three 3-inch diameter targets that can be configured for confocal or parallel sputtering. Both metals and dielectrics can be deposited using the 1.2 kW DC power supply or the 600 W RF power supply. Read More

  • The Explorer-14 sputterer is equipped with three 3-inch diameter targets that can be configured for confocal or parallel sputtering. Both metals and dielectrics can be deposited using the 1.2 kW DC power supply or the 600 W RF power supply. Prior to deposition, the samples can be cleaned in situ using the 600 W RF power supply. The temperature of the 12 inch-diameter rotatable sample holder is controlled by a chiller. The tool is fitted with a cryopump for reduced pump down times.
  • The PVD75 evaporator has 4 e-beam pockets and two thermal boats with individual shutters. The 12-inch rotatable sample holder can be heated to up to 350°C. The tool is fitted with a cryopump for reduced pump down times.
  • Cambridge Nanotech Savannah 200 thermal ALD tool is used to deposit highly conformal, uniform, and void-free films on up to 8 inch wafers. Precursors for the following materials are available: SiO2, Al2O3, AlN, HfO2, and TiO2. The deposition temperature can be adjusted from room temperature to 450°C.
  • Specialty Coating Systems 2010 Parylene Labcoter is used to deposit highly conformal, uniform, and pinhole-free films at room temperature thus avoiding many of the issues encountered in high temperature deposition methods.
  • Fujifilm/Dimatix DMP-2831 printer can create and define patterns over an area of about 200 x 300 mm and handle substrates up to 25 mm thick with an adjustable Z height.
  • In the new facility, we plan on adding a second sputterer, another evaporator, another ALD tool, growth chambers for carbon nanotubes and semiconducting nanowires, a screen printer, and a Langmuir-Blodgett trough.
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Etch:

The Oxford Instruments Plasmalab 80+ is a parallel plate RIE provided with a fluorine-based chemistry: CF4, SF6, CHF3, Ar, and O2 and is used to etch primarily silicon, oxides, and nitrides. Read More

  • The Oxford Instruments Plasmalab 80+ is a parallel plate RIE provided with a fluorine-based chemistry: CF4, SF6, CHF3, Ar, and O2 and is used to etch primarily silicon, oxides, and nitrides. It is fitted with a 600 W RF generator and a turbo molecular pump for high vacuum creation. The temperature of the sample can be adjusted from 5°C to 70°C.
  • The Trion ICP has two 600 W RF generators; one used to generate the plasma (ICP generator) and another used to bias the substrate (RIE generator). The bias voltage at the substrate can be controlled more or less independently of the plasma density. The following gases are available: Cl2, BCl3, CF4, SF6, Ar, and O2. The tool uses a Pfeiffer TPH 261PC turbomolecular pump for high vacuum generation. The temperature of the sample holder can be controlled (7 to 70°C) with a chiller.
  • The Xactix XeF2 etcher is particularly well suited for MEMS applications. XeF2 vapor phase etching exhibits nearly infinite selectivity of silicon to photo-resist, silicon dioxide, silicon nitride and aluminum. Being a vapor phase etchant, XeF2 avoids many of the problems typically associated with wet processes.
  • The Technics Planar Etch II is provided with O2 and is mainly used as an asher.
  • In the new facility, a deep Si etcher, fluorine ICP etcher, chlorine ICP etcher, asher, and table top plasma cleaners are planned.
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Thermal Processing:

  • Eight tube furnace (for LPCVD, oxidation, and anneal) accommodating up to size inch wafers will be installed in the new facility. A rapid thermal annealer and miscellaneous ovens are planned for the new facility.

Wet Processing:

  • We plan to install new spin rinse dryers(6), wetbenches (12), an HF vapor etcher, a critical point dryer, and electroplating tanks (2)

Packaging:

A wafer bonder and a bond aligner will be initially installed in the existing facility and then moved to the new facility. Read More

  • A wafer bonder and a bond aligner will be initially installed in the existing facility and then moved to the new facility.
  • The KNS 4523 wedge bonder can be used with aluminum and gold wire. The maximum ultrasonic power is 2.5 W and the maximum bond force is 160 g. The tool is also fitted with a heated stage.
  • A wafer scriber, dicing saw, and flip-chip bonder are planned for the new facility.
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Characterization:

The lab is equipped with a surface profilometer, optical microscopes, an ellipsometer, refractometer, stress measurement tool, probe station, and four point probe station. In the new facility we plan to install the following new tools: Read More

  • The lab is equipped with a surface profilometer, optical microscopes, an ellipsometer, refractometer, stress measurement tool, probe station, and four point probe station. In the new facility we plan to install the following new tools: scanning electron microscope, atomic force microscope, microscopes (4), ellipsometer (2), profilometer (2), refractometer (2), four-point probe station, and I-V/C-V station; only the existing stress measurement tool will be moved into the new facility.
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Miscellaneous:

A chemical mechanical polisher, ozone cleaner, glove box, PDMS processing station, and contact angle measurement system are planned for the new building. Read More

  • A chemical mechanical polisher, ozone cleaner, glove box, PDMS processing station, and contact angle measurement system are planned for the new building.
  • A Nano/Bio bay will allow technologies that exploit the best of bioengineering and nanofabrication to be carried out without compromising the environments for either capability through the use of an independent air-handling unit and structural isolation from the other bays. This attribute will be unique in the mid-Atlantic region.
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